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| 2SD1781K Elektronische Bauelemente NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Very low VCE(sat).VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA) Complements to 2SB1197K 2 Base Collector A L 3 3 3 Top View 1 2 CB 1 2 K E D 1 Emitter F REF. G Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 H J Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. MARKING AF = hFE ranking A B C D E F REF. G H J K L ABSOLUTE MAXIMUM RATINGS Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Total Device Dissipation Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 40 32 5 0.8 200 150, -55~150 Unit V V V A mW C ELECTRICAL CHARACTERISTICS Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance (TA = 25C unless otherwise noted) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT COB Min. 40 32 5 120 - Typ. 150 10 Max. 0.5 0.5 390 0.4 - Unit V V V A A V MHz pF Test Conditions IC = 50A, IE = 0 IC = 1mA, IB = 0 IE = 50A, IC = 0 VCB = 20V, IE = 0 VEB = 4V, IC = 0 IC = 100mA, VCE = 3.0V IC = 500mA, IB = 50mA VCE = 5V, IC = 50mA, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz CLASSIFICATION OF hFE Rank Range Marking Q 120 - 270 AFQ R 180-390 AFR http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2002 Rev. A Page 1 of 2 2SD1781K Elektronische Bauelemente NPN Silicon Plastic Encapsulated Transistor CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2002 Rev. A Page 2 of 2 |
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